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Freescale Semiconductor Technical Data
Document Number: MDE6IC9120N Rev. 0, 11/2009
RF LDMOS Wideband Integrated Power Amplifiers
The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. * Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA, VG2B = 1.6 Vdc, Pout = 25 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 32.5 32.0 31.3 PAE (%) 38.4 38.0 37.7 Output PAR (dB) 6.6 6.7 7.0 ACPR (dBc) - 39.0 - 40.4 - 39.6
MDE6IC9120NR1 MDE6IC9120GNR1
920 - 960 MHz, 25 W AVG., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 146 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness * Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 120 Watts CW Pout * Typical Pout @ 1 dB Compression Point ] 120 Watts CW Features * Production Tested in a Symmetrical Doherty Configuration * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters * On - Chip Matching (50 Ohm Input, DC Blocked) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) * Integrated ESD Protection * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VGS1A RFinA CARRIER (2) RFout1/VDS2A VGS1A GND RFinA GND GND VGS2A VDS1A VDS1B VGS2B GND GND RFinB GND VGS1B
CASE 1866 - 02 TO - 270 WBL - 16 PLASTIC MDE6IC9120NR1
CASE 1867 - 02 TO - 270 WBL - 16 GULL PLASTIC MDE6IC9120GNR1
VGS2A VDS1A VDS1B VGS2B RFinB VGS1B
Quiescent Current Temperature Compensation (1)
PEAKING (2) RFout2/VDS2B
1 2 3 4 5 6 7 8 9 10 11 12 13 14
16
RFout1/VDS2A
15
RFout2/VDS2B
(Top View) Quiescent Current Temperature Compensation (1) Note: Exposed backside of the package is the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. 2. Peaking and Carrier orientation is determined by the test fixture design.
(c) Freescale Semiconductor, Inc., 2009. All rights reserved.
MDE6IC9120NR1 MDE6IC9120GNR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Input Power Symbol VDSS VGS VDD Tstg TC TJ Pin Value - 0.5, +66 - 0.5, +10 32, +0 - 65 to +150 150 225 30 Unit Vdc Vdc Vdc C C C dBm
Table 2. Thermal Characteristics
Characteristic Final Doherty Application Thermal Resistance, Junction to Case Case Temperature 80C, Pout = 30 W CW Stage 1A, 27 Vdc, IDQ1A = 90 mA Stage 1B, 27 Vdc, IDQ1B = 90 mA Stage 2A, 27 Vdc, IDQ2A = 550 mA Stage 2B, 27 Vdc, VG2B = 2.5 Vdc RJC 6.0 4.9 1.3 0.95 C/W Symbol Value (2,3) Unit
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
MDE6IC9120NR1 MDE6IC9120GNR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Stage 1 -- Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 -- On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1A = IDQ1B = 90 mA) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1A = IDQ1B = 90 mA, Measured in Functional Test) Stage 2 -- Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 -- On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 160 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2A = 550 mA) Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2A = 550 mA, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 407 mA) VGS(th) VGS(Q) VGG(Q) VDS(on) 1 -- 5.8 0.15 1.7 2.1 6.5 0.3 3 -- 7.2 0.8 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc VGS(th) VGS(Q) VGG(Q) 1 -- 7.4 1.7 2.5 8.1 3 -- 8.8 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (2,3,4) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA, VG2B = 1.6 Vdc, Pout = 25 W Avg., f = 940 MHz, Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Power Added Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Gps PAE PAR ACPR 30.0 36.0 5.8 -- 32.0 38.0 6.7 - 40.4 36.0 -- -- - 36.0 dB % dB dBc
Typical Broadband Performance (3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA, VG2B = 1.6 Vdc, Pout = 25 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset Frequency 920 MHz 940 MHz 960 MHz 1. 2. 3. 4. Gps (dB) 32.5 32.0 31.3 PAE (%) 38.4 38.0 37.7 Output PAR (dB) 6.6 6.7 7.0 ACPR (dBc) - 39.0 - 40.4 - 39.6
Each side of device measured separately. Part internally matched both on input and output. Measurement made with device in a Symmetrical Doherty configuration. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MDE6IC9120NR1 MDE6IC9120GNR1 RF Device Data Freescale Semiconductor 3
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA, VG2B = 1.6 Vdc, 920 - 960 MHz Bandwidth Pout @ 1 dB Compression Point, CW IMD Symmetry @ 90 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Quiescent Current Accuracy over Temperature (2) with 4.3 k Gate Feed Resistors ( - 30 to 85C) Gain Flatness in 40 MHz Bandwidth @ Pout = 25 W Avg. Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Stage 1 Stage 2 P1dB IMDsym -- -- 120 8 -- -- W MHz
VBWres IQT GF G P1dB
-- -- -- -- -- --
50 0.02 0.03 1.2 0.04 0.02
-- -- -- -- -- --
MHz % dB dB/C dBm/C
1. Measurement made with device in a Symmetrical Doherty configuration. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
MDE6IC9120NR1 MDE6IC9120GNR1 4 RF Device Data Freescale Semiconductor
R3
VG1 C3
MDE6IC9120N Rev 2A
VD2
C19
C13 C27 R5 C9 C5 C6 C7 R1 C12 VD1 VG2 C2 C28 C10 C8 R6 C1 C21 C23 C25 C26 C24 C22
C17
VG2 VD1 Coupler 1 C11
CUT OUT AREA
C18 C14 R4 VG1 C4 VD2 C20
Note: Component numbers C15, C16 and R2 are not used.
Figure 3. MDE6IC9120NR1(GNR1) Test Circuit Component Layout
Table 6. MDE6IC9120NR1(GNR1) Test Circuit Component Designations and Values
Part C1, C2, C5, C6, C7, C8 C3, C4, C9, C10, C11, C12 C13, C14, C27, C28 C17, C18 C19, C20 C21, C22 C23, C24 C25, C26 Coupler 1 R1 R3, R4, R5, R6 PCB Description 0.01 F, 50 V Chip Capacitors 1.0 F, 35 V Chip Capacitors 39.0 pF Chip Capacitors 10.0 F, 35 V Chip Capacitors 220 F, 50 V Electrolytic Capacitors 15.0 pF Chip Capacitors 1.6 pF Chip Capacitors 2.7 pF Chip Capacitors 50 , 3 dB Hybrid Coupler 50 , 10 W Termination 4.3 K, 1/4 W Chip Resistors 0.020, r = 3.50 Part Number GCM2195C1H103JA16D GRM32RR71H105KA01K ATC600F390JT250XT GRM55DR61H106KA88L EMVY500ADA221MJA0G ATC600F150GT250XT ATC600F1R6JT250XT ATC600F2R7JT250XT GSC362- HYB0900 RFP - 060120A15Z50- 2 CRCW12064K30FKEA RO4350B Manufacturer Murata Murata ATC Murata Nippon Chemi - Con ATC ATC ATC Soshin Anaren Vishay Rogers
MDE6IC9120NR1 MDE6IC9120GNR1 RF Device Data Freescale Semiconductor 5
Single-ended
l 4
l 4
Quadrature combined
l 4
Doherty
l 2
l 2
Push-pull
Figure 4. Possible Circuit Topologies
MDE6IC9120NR1 MDE6IC9120GNR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
PAE, POWER ADDED EFFICIENCY (%) 0 ACPR (dBc) PARC (dB) ACPR (dBc) -1 -2 -3 -20 PAE, POWER ADDED EFFICIENCY (%) -25 -30 -35 -40 -45 -50 40 35 Gps, POWER GAIN (dB) PAE 30 25 20 15 10 800 PARC ACPR 825 850 875 900 925 950 975 -50 1000 Gps 20 IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA VG2B = 1.6 Vdc, Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB 10 @ 0.01% Probability on CCDF -30 -40 40 VDD = 28 Vdc, Pout = 25 W (Avg.) 30
f, FREQUENCY (MHz)
Figure 5. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 25 Watts Avg.
-10 -20 -30 -40 -50 -60 -70 1 10 TWO-TONE SPACING (MHz) 100 IM5-U IM5-L IM7-L IM7-U VDD = 28 Vdc, Pout = 90 W (PEP), IDQ1A = IDQ1B = 90 mA IDQ2A = 550 mA, VG2B = 1.6 Vdc, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 940 MHz IM3-U IM3-L
IMD, INTERMODULATION DISTORTION (dBc)
Figure 6. Intermodulation Distortion Products versus Two - Tone Spacing
50 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 45 Gps, POWER GAIN (dB) 40 35 30 25 20 1 0 -1 -2 -3 -4 -5 10
VDD = 28 Vdc, IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA VG2B = 1.6 Vdc, f = 940 MHz -1 dB = 33.01 W -2 dB = 50.78 W
60 PAE 50 ACPR 40
-3 dB = 67.13 W Gps PARC Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% PARC Probability on CCDF 20 30 40 50 60 70 80 90
30 20 10 0
100
Pout, OUTPUT POWER (WATTS)
Figure 7. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
MDE6IC9120NR1 MDE6IC9120GNR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
36 35 Gps, POWER GAIN (dB) 34 33 32 31 30 1 ACPR 10 Pout, OUTPUT POWER (WATTS) AVG. 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 920 MHz 960 MHz 940 MHz 0 100 VDD = 28 Vdc, IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA VG2B = 1.6 Vdc, Single-Carrier, W-CDMA 920 MHz 940 MHz 960 MHz 940 MHz 960 MHz PAE 60 PAE, POWER ADDED EFFICIENCY (%) 50 40 30 20 10 -20 -25 -30 -35 -40 -45 -50 ACPR (dBc) +ACPR in 3.84 MHz Integrated BW 1.8 3.6
Gps
Figure 8. Single - Carrier W - CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power
40 35 30 GAIN (dB) 25 20 15 10 IRL 5 0 600 -30 -35 1200 VDD = 28 Vdc, Pin = 0 dBm IDQ1A = IDQ1B = 90 mA IDQ2A = 550 mA, VG2B = 1.6 Vdc Gain 5 0 -5 -10 -15 -20 -25 IRL (dB) 3.84 MHz Channel BW 0
700
800
900
1000
1100
f, FREQUENCY (MHz)
Figure 9. Broadband Frequency Response
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1 2 3 4 5 6 7 8 9 10 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -9 -7.2 -5.4 -3.6 -1.8 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW
PEAK-TO-AVERAGE (dB)
Figure 10. CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal MDE6IC9120NR1 MDE6IC9120GNR1 8
Figure 11. Single - Carrier W - CDMA Spectrum RF Device Data Freescale Semiconductor
VDD = 28 Vdc, IDQ1A = IDQB = 90 mA, IDQ2A = 550 mA, VG2B = 1.6 Vdc, Pout = 25 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zin = Zin W 56.02 - j0.10 57.03 - j2.95 57.27 - j6.01 57.45 - j8.80 57.56 - j12.21 56.66 - j15.98 55.81 - j19.90 53.45 - j23.91 51.34 - j27.40 Zload W 3.61 + j1.78 3.11 + j1.50 2.65 + j1.56 2.28 + j1.81 2.07 + j2.11 1.87 + j2.40 1.77 + j2.64 1.75 + j2.89 1.58 + j3.12
Note: Measured with Peaking side open. Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground.
Zload =
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 12. Series Equivalent Input and Load Impedance -- Carrier Side
VDD = 28 Vdc, IDQ1A = IDQB = 90 mA, IDQ2A = 550 mA, VG2B = 1.6 Vdc, Pout = 25 W Avg. f MHz 820 840 860 880 900 920 940 960 980 Zin = Zin W 56.02 - j0.10 57.03 - j2.95 57.27 - j6.01 57.45 - j8.80 57.56 - j12.21 56.66 - j15.98 55.81 - j19.90 53.45 - j23.91 51.34 - j27.40 Zload W 2.56 - j3.47 2.36 - j2.95 2.15 - j2.39 2.02 - j1.85 1.90 - j1.32 1.72 - j0.85 1.60 - j0.39 1.47 + j0.12 1.30 + j0.66
Note: Measured with Carrier side open. Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground.
Zload =
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 13. Series Equivalent Input and Load Impedance -- Peaking Side MDE6IC9120NR1 MDE6IC9120GNR1 RF Device Data Freescale Semiconductor 9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ1A = 90 mA, IDQ2A = 550 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 56 55 Pout, OUTPUT POWER (dBm) 54 53 52 51 50 49 48 47 46 45 9 10 11 12 13 14 15 16 17 18 19 20 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 920 940 960 P1dB Watts 98.4 98.9 95.5 dBm 49.9 50.0 49.8 P3dB Watts 123 123 118 dBm 50.9 50.9 50.7 940 MHz 960 MHz 920 MHz 960 MHz 920 MHz Actual Ideal
940 MHz
Test Impedances per Compression Level f (MHz) 920 940 960 P1dB P1dB P1dB Zsource 49.53 - j0.96 48.85 - j0.63 51.26 - j0.82 Zload 1.59 - j0.84 1.75 - j0.53 1.72 - j0.33
Figure 14. Pulsed CW Output Power versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MDE6IC9120NR1 MDE6IC9120GNR1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MDE6IC9120NR1 MDE6IC9120GNR1 RF Device Data Freescale Semiconductor 11
MDE6IC9120NR1 MDE6IC9120GNR1 12 RF Device Data Freescale Semiconductor
MDE6IC9120NR1 MDE6IC9120GNR1 RF Device Data Freescale Semiconductor 13
MDE6IC9120NR1 MDE6IC9120GNR1 14 RF Device Data Freescale Semiconductor
MDE6IC9120NR1 MDE6IC9120GNR1 RF Device Data Freescale Semiconductor 15
MDE6IC9120NR1 MDE6IC9120GNR1 16 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family * AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Nov. 2009 * Initial Release of Data Sheet Description
MDE6IC9120NR1 MDE6IC9120GNR1 RF Device Data Freescale Semiconductor 17
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MDE6IC9120NR1 MDE6IC9120GNR1
Rev. 18 0, 11/2009 Document Number: MDE6IC9120N
RF Device Data Freescale Semiconductor

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